Browsing by Subject "Conduction band edge"
Now showing items 1-4 of 4
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Article
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...